| 세션명 | 미래소재: 반데르발스 층상 소재용 전구체 합성 |
|---|---|
| 발표장 | 제6회장 |
| 논문코드 | 1L6-3 |
| 발표일 | 2021-10-21 |
| 발표시간 | 14:50-15:15 |
| 논문제목 | High Performance Solution-processed WSe2 Transistors |
| 발표자 | 노용영 |
| 발표자 소속 | 포항공과대학교 |
| 저자 | 노용영† |
| 소속 | 포항공과대학교 |
| 논문초록 | Two-dimensional (2D) transition-metal dichalcogenides (TMDC) is considered as one of the promising candidates for next-generation optoelectronics. Among chemical vapor deposition (CVD), mechanical exfoliation, solution-phase chemical synthesis, liquid-phase exfoliation (LPE), and intercalation-based exfoliation methods, the solution-processable method for synthesizing 2D nanosheets offers significant potential in thin-film electronics for large-area flexible and wearable devices. Solution-processed n-type transistors (MoS2) have reached high mobility of over 10 cm2 V-1 s-1. However, the performance for the solution-processed p-type 2D transistor is still inferior. Here, we demonstrate that high performance solution processed WSe2 transistors. The optimized WSe2 transistor exhibits increased mobility up to 30 cm2 V-1 s-1 from bare devices with relatively low mobility of 10-6 cm2 V-1 s-1. Especially, the high on/off ratio of the solvent-treated WSe2 transistor increased to over 106 from 104. We will present details how we achieve high performance in the conference. |
THE POLYMER SOCIETY OF KOREA